GaN Transistor Modeling for RF and Power Electronics: Using The ASM-HEMT Model - Woodhead Publishing Series in Electronic and Optical Materials - Chauhan, Yogesh Singh (Chair Professor, Department of Electrical Engineering, Indian Institute of Technology Kanpur, India) - Books - Elsevier Science Publishing Co Inc - 9780323998710 - May 22, 2024
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Chauhan, Yogesh Singh (Chair Professor, Department of Electrical Engineering, Indian Institute of Technology Kanpur, India)
GaN Transistor Modeling for RF and Power Electronics: Using The ASM-HEMT Model - Woodhead Publishing Series in Electronic and Optical Materials

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425 pages, 200 illustrations (150 in full color); Illustrations, unspecified

Media Books     Paperback Book   (Book with soft cover and glued back)
Released May 22, 2024
ISBN13 9780323998710
Publishers Elsevier Science Publishing Co Inc
Pages 260
Dimensions 230 × 152 × 18 mm   ·   353 g
Language English  

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